Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to DENTAL FLOSS cryogenic conditions, without the need for substrate implantation.The fabrication process, termed the Nanomole

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Roadmap to Talking Quantum Movies: a Contingent Inquiry

Quantum computation and quantum information science have transmuted from classroom conjectures and demonstrations usually confined to the laboratory into exciting sub-disciplines with potential for profound impacts in information and communication security, device miniaturization, cosmology, Internet, and so on.Recent developments in both areas hav

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